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Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012