Active-matrix mesh electronics thin-film-transistor arrays for biometrics-under-display and biomedical applications

A monolithic manufacturing process is presented for the realization of active-matrix meshed thin-film-transistor (TFT) arrays on foil with physical voids between pixels, realizing membrane-like electronic arrays. The process is scalable to large-area substrates and enables (improved performance of) biometrics-under-display applications. Moreover...

Igzo tft arrays for biometrics-under-display and biomedical applications

This paper presents a monolithic manufacturing process to realize active-matrix meshed TFT arrays on foil with physical voids between pixels, realizing membrane-like structures for use in biometrics-under-display applications. Moreover, however, the concept enables new applications in the biomedical electronics domain.

Vein detection with near-infrared organic photodetectors for biometric authentication

We combine a low dark current and high-detectivity near-infrared (NIR)-sensitive organic photodetector with a high-resolution 508 pixels per inch (ppi) oxide thin-film transistor (TFT) backplane to create a large-area thin NIR detector, using processes that are compatible with flat-panel display fabrication. The detector is characterized showing...

1000-Pixels per Inch Transistor Arrays Using Multi-Level Imprint Lithography

Sub-micrometer thin-film transistors (TFTs) are realized using multi-level imprint lithography. Amorphous indium gallium zinc oxide (α-IGZO) TFTs with channel lengths as small as 0.7 μm, field-effect mobility of 10 cm2 V−1 s−1 and on/off ratio of circa 107 were integrated into a 1000-pixels per inch (ppi) TFT backplane array. The reduction of...

Multi-level nanoimprint lithography for large-area thin film transistor backplane manufacturing

Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography

Thin-film transistors (TFTs) are the fundamental building blocks of today's display industry. To achieve higher drive currents and device density, it is essential to scale down the channel lengths of TFTs. To be able to fabricate short-channel TFTs in large volumes is also equally important in order to realize lower fabrication costs and higher...

Dual-gate self-aligned IGZO TFTs monolithically integrated with high-temperature bottom moisture barrier for flexible AMOLED

5-3: Distinguished Paper: Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications

We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made...