Searched for: author%3A%22Asadi%2C+K.%22
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Wang, X. (author), Wilson, P.R. (author), Leite, R.B. (author), Chen, G. (author), Freitas, H. (author), Asadi, K. (author), Smits, E.C.P. (author), Katsouras, I. (author), Rocha, P.R.F. (author)
Generating electricity from low-frequency mechanical agitations produced by ocean waves, plants, or human motion is emerging as a key, environmentally friendly technology in combating harmful emissions caused by burning fossil fuels. The electric pulses generated by the appropriate transducers, such as triboelectric or piezoelectric generators,...
article 2020
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Smits, E.C.P. (author), Walter, A. (author), de Leeuw, D.M. (author), Asadi, K. (author)
Transfer of graphene and other two-dimensional materials is still a technical challenge. The 2D-materials are typically patterned after transfer, which leads to a major loss of material. Here, we present laser induced forward transfer of chemical vapor deposition grown graphene layers with well-defined shapes and geometries. The transfer is...
article 2017
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Lenz, T. (author), Sharifi Dehsari, H. (author), Asadi, K. (author), Blom, P.W.M. (author), Groen, W.A. (author), de Leeuw, D.M. (author)
We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric...
article 2016
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van der Kaap, N.J. (author), Katsouras, I. (author), Asadi, K. (author), Blom, P.W.M. (author), Koster, L.J.A. (author), de Leeuw, D.M. (author)
The current density-voltage (J-V) characteristics of hole-only diodes based on poly(2-methoxy, 5-(2′ ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) were measured at a wide temperature and field range. At high electric fields the temperature dependence of the transport vanishes, and all J-V sweeps converge to a power law. Nuclear tunneling...
article 2016
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Zhao, D. (author), Katsouras, I. (author), Asadi, K. (author), Groen, W.A. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of...
article 2016
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Katsouras, I. (author), Zhao, D. (author), Spijkman, M.J. (author), Li, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), Asadi, K. (author)
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual...
article 2015
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Lenz, T. (author), Zhao, D. (author), Richardson, G. (author), Katsouras, I. (author), Asadi, K. (author), Glasser, G. (author), Zimmermann, S.T. (author), Stingelin, N. (author), Roelofs, W.S.C. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDFTrFE)) interdigitated with the...
article 2015
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Zhao, D. (author), Katsouras, I. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Switching, i.e., polarization reversal, of ferroelectric P(VDF-TrFE) thin films has been investigated in a wide range of applied electric field and temperature. The measured polarization transients can be quantitatively described by a compressed exponential function as originally formulated by Kolmogorov, Avrami, and Ishibashi (the KAI model)....
article 2015
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Brondijk, J.J. (author), Maddalena, F. (author), Asadi, K. (author), van Leijen, H.J. (author), Heeney, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020cm-3. Hole-only diodes were used for densities below 1016cm-3 and field-effect transistors were used for carrier densities higher than 1018cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and...
article 2012
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Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Beerends, R. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The processing of solution-based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) and the semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) applied by spin-coating and wire-bar coating is investigated. By systematic variation of blend composition, solvent, and deposition...
article 2012
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Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012
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Kemerink, M. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic...
article 2012
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Li, M. (author), Stingelin, N. (author), Michels, J.J. (author), Spijkman, M.-J. (author), Asadi, K. (author), Feldman, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of α- and β-phase PVDF was identified. Ferroelectric β-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent...
article 2012
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Brondijk, J.J. (author), Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge...
article 2012
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Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Passive or active matrix driving schemes in large displays are prone to high power consumption and cost, respectively. For signage applications such as large out-door displays with low refresh rates there is as yet no technological solution. Here the MEMOLED solution, an organic light-emitting diode with an integrated ferroelectric memory, is...
article 2011
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Asadi, K. (author), Wondergem, H.J. (author), Moghaddam, R.S. (author), McNeill, C.R. (author), Stingelin, N. (author), Noheda, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The operation of resistive switches based on phase-separated blends of organic ferroelectrics and semiconductors depends significantly on the microstructure of such systems. A wide range of analysis techniques are used to characterize spin-coated films of the ferroelectric random copolymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)...
article 2011
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Gholamrezaie, F. (author), Asadi, K. (author), Kicken, R.A.H.J. (author), Langeveld-Voss, B.M.W. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author)
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By...
article 2011
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Asadi, K. (author), de Bruyn, P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
We have investigated the efficiency enhancement of organic solar cells upon incorporation of a thin ferroelectric polymer layer. For non-Ohmic contacts the enhancement is due to an increased open circuit voltage, which is, however, independent of the ferroelectric polarization direction. Ferroelectricity cannot play a role due to depolarization...
article 2011
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Asadi, K. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Staggered bottom-contact top-gate organic ferroelectric field-effect transistors are fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as ferroelectric gate and poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine] as semiconductor. Polarization reversal of the ferroelectric gate is monitored by displacement transients in the...
article 2011
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Asadi, K. (author), Li, M. (author), Blom, P.W.M. (author), Kemerink, M. (author), de Leeuw, D.M. (author)
Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto...
article 2011
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