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Tripathi, A.K. (author), Smits, E.C.P. (author), Loth, M. (author), Anthony, J.E. (author), Gelinck, G.H. (author)
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s...
article 2011
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author)
article 2011
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, G. (author), Heremans, P. (author), Gelinck, G.H. (author)
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit...
article 2011
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Moonen, P.F. (author), Vratzov, B. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Peter, M. (author), Meinders, E.R. (author), Huskens, J. (author)
In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The...
article 2011
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Heremans, P. (author), Dehaene, W. (author), Steyaert, M. (author), Myny, K. (author), Mariën, H. (author), Genoe, J. (author), Gelinck, G.H. (author), van Veenendaal, E. (author)
In this paper, we review the state of the art of digital and analog circuits that have been shown in recent years in organic thin-film transistor technology on flexible plastic foil. The transistors are developed for backplanes of displays, and therefore have the characteristics to be unipolar and to possess two gates. The dual-gate architecture...
conference paper 2011
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Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...
article 2011
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Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
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Yu, L. (author), Li, X. (author), Pavlica, E. (author), Loth, M.A. (author), Anthony, J.E. (author), Bratina, G. (author), Kjellander, C. (author), Gelinck, G.H. (author), Stingelin, N. (author)
Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of the casting temperature of the semiconductor and...
article 2011
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Ferroni, M. (author), Federici, S. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Thin-film transistors (TFTs), which use zinc oxide (ZnO) as an active layer, were fabricated and investigated in detail. The transport properties of ZnO deposited by spray pyrolysis (SP) on a TFT structure are studied in a wide range of temperatures, electrical conditions (i.e., subthreshold, above-threshold linear, and saturation regions), and...
article 2011
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van Breemen, A.J.J.M. (author), van der Putten, J.B.P.H. (author), Cai, R. (author), Reimann, K. (author), Marsman, A.W. (author), Willard, N. (author), de Leeuw, D.M. (author), Gelinck, G.H. (author)
An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1-2 µm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a...
article 2011
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Myny, K. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P.L. (author)
In this chapter, fully integrated organic RFID tags are demonstrated. These tags are inductively-coupled at a base frequency of 13.56 MHz and can be read out at distances up to 10 cm, which is the expected readout distance for proximity readers. We also demonstrate next generation transponder chips, fabricated in a dual-gate technology. The...
conference paper 2011
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, J.B.P.H. (author), van der Steen, J.L. (author), van Neer, M.K.P. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The back plane process flow is based on a 7 layer photolithography process that yields a final mobility of the OTFT of ∼0.4cm2/Vs. The aperture ratio of the top-emitting OLEDs is over 75%. For operation at...
conference paper 2011
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Furthner, F. (author), Peter, M. (author), van der Putten, B. (author), Gelinck, G.H. (author), Meinders, E.R. (author), Geuns, T.C.T. (author), de Laat, W. (author)
The development of high performance thin-film transistors on flexible plastic substrates is of great importance for the manufacturing and industrialization of flexible electronic devices, such as flexible displays. Here we present different approaches to fabricate bottom-gate field-effect transistors on 25 μm heat stabilized polyethylene...
article 2011
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Marien, H. (author), Steyaert, M. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Gelinck, G.H. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)
In this paper a fully integrated organic DC-DC upconverter is presented in a pentacene p-type only technology. This 3-stage Dickson converter reaches a voltage conversion factor of 3 for a purely capacitive load and 2.5 for a 10 μA load current. The maximal output voltage goes up to 75 V and the Dickson core efficiency is 48 %. The clock signal...
conference paper 2010
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Genoe, J. (author), Myny, K. (author), Steudel, S. (author), Smaut, S. (author), Vicca, P. (author), van der Putten, B. (author), Tripathi, A.K. (author), van Aerie, N.A.J.M. (author), Gelinck, G.H. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
Last year, advances in organic device technology (such as device scaling, high K-dielectrics [1], ... ) enabled a substantial progress in performance. This resulted in an increase in the data rate of plastic transponder circuits from about 2 kbit/s [21 to EPC-compatible speeds (SO kbit/s). The organic semiconductor pentacene deposited from...
conference paper 2010
document
Myny, K. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Imec, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Hogeschool Limburg, 3590 Diepenbeek, Belgium Katholieke Universiteit Leuven, 3001 Leuven, Belgium TNO-Holst Centre, High-Tech Campus 31, P.O. Box 8550, 5605KN Eindhoven, Netherlands (author)
Data rates of plastic transponder chips have been limited to a few kHz, limited by the inherent low mobility of organic semiconductors. However, a target application for plastic RFID tags is Electronic Product Coding (EPC), which will require, at a base carrier frequency fc = 13.56 MHz, a data rate of fc/512 = 52.969 kb/s. In this work, we show...
article 2010
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Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
Research towards organic RFID tags is one of the drivers of organic electronics. In recent years, 64b organic RFID tags have been shown with capacitive coupling [1] and inductive coupling at 13.56 MHz [2,3]. Recent improvements were a 128b organic transponder chip with basic anti-collision and Manchester encoding [4] and a first 4b tag in...
conference paper 2010
document
Myny, K. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
A target application for plastic RFID tags is Electronic Product Coding (EPC). The EPC-specifications set some demanding requirements for RFID tags. In this work, we review the work that has been done to fulfill some of these specifications. We describe a complete 64-bit RFID tag that is inductively-coupled at a base carrier frequency of 13.56...
conference paper 2010
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