Searched for:
(1 - 18 of 18)
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Oostra, A.J. (author), Reddy, A. (author), Smits, E.C.P. (author), Abbel, R.J. (author), Groen, W.A. (author), Blom, P.W.M. (author), Michels, J.J. (author)
A method is presented to self-repair cracks in embedded silver grid structures used in large area organic electronics. The repair procedure is based on electro-deposition, incited by the application of a moderate DC voltage across the crack. During this process the organic anode that is in direct electrical contact with the silver grid,...
article 2016
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Oostra, A.J. (author), Smits, E.C.P. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author), Michels, J.J. (author)
The operational characteristics of organic solar cells manufactured with large area processing methods suffers from the occurrence of short-circuits due to defects in the photoactive thin film stack. In this work we study the effect of a shunt resistance on an organic solar cell and demonstrate that device performance is not affected negatively...
article 2015
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Brondijk, J.J. (author), Torricelli, F. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the...
article 2012
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Andringa, A.-M. (author), Vlietstra, N. (author), Smits, E.C.P. (author), Spijkman, M.-J. (author), Gomes, H.L. (author), Klootwijk, J.H. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated...
article 2012
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Spijkman, M. (author), Smits, E.C.P. (author), Cillessen, J.F.M. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum detectable change in electrochemical potential according to the Nernst equation. Here we demonstrate a transducer based on a ZnO dual-gate field-effect transistor that breaches this boundary. To enhance the response to the...
article 2011
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Andringa, A.-M. (author), Meijboom, J.R. (author), Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Detection of nitrogen dioxide, NO2, is required to monitor the air-quality for human health and safety. Commercial sensors are typically chemiresistors, however field-effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not clear. Here, the detection mechanism using ZnO...
article 2011
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Spijkman, M.-J. (author), Myny, K. (author), Smits, E.C.P. (author), Heremans, P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a-Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the...
article 2011
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Li, X. (author), Smaal, W.T.T. (author), Kjellander, C. (author), van der Putten, B. (author), Gualandris, K. (author), Smits, E.C.P. (author), Anthony, J. (author), Broer, D.J. (author), Blom, P.W.M. (author), Genoe, J. (author), Gelinck, G.H. (author)
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we...
article 2011
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Katsouras, I. (author), Kronemeijer, A.J. (author), Smits, E.C.P. (author), van Hal, P.A. (author), Geuns, T.C.T. (author), Blom, P.W.M. (author), Leeuw, D.M. (author)
A large bias window is required to discriminate between different transport models in large-area molecular junctions. Under continuous DC bias, the junctions irreversibly break down at fields over 9 MV/cm. We show that, by using pulse measurements, we can reach electrical fields of 35 MV/cm before degradation. The breakdown voltage is shown to...
article 2011
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Andringa, A-M. (author), Spijkman, M-J. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), van Hal, P.A. (author), Setayesh, S. (author), Willard, N.P. (author), Borshchev, O.V. (author), Ponomarenko, S.A. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a...
article 2010
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Spijkman, M. (author), Mathijssen, S.G.J. (author), Smits, E.C.P. (author), Kemerink, M. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the...
article 2010
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Spijkman, M.-J. (author), Brondijk, J.J. (author), Geuns, T.C.T. (author), Smits, E.C.P. (author), Cramer, T. (author), Zerbetto, F. (author), Stoliar, P. (author), Biscarini, F. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yield dual-gate organic transducers. The process technology is scaled up to 150-mm wafers. The transducers are potentiometric sensors where the detection relies on measuring a shift in the threshold voltage caused by changes in the electrochemical...
article 2010
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Smits, E.C.P. (author), Mathijssen, S.G.J. (author), van Hal, P.A. (author), Setayesh, S. (author), Geuns, T.C.T. (author), Mutsaers, K.A.H.A. (author), Cantatore, E. (author), Wondergem, H.J. (author), Werzer, O. (author), Resel, R. (author), Kemerink, M. (author), Kirchmeyer, S. (author), Muzafarov, A.M. (author), Ponomarenko, S.A. (author), de Boer, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en techniek (author)
Self-assembly—the autonomous organization of components into patterns and structures1—is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom-up approach involving self-assembling molecules was proposed2 in the 1970s. The basic building block of such an integrated circuit is the self...
article 2008
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van Hal, P.A. (author), Smits, E.C.P. (author), Geuns, T.C.T. (author), Akkerman, H.B. (author), de Brito, B.C. (author), Perissinotto, S. (author), Lanzani, G. (author), Kronemeijer, A.J. (author), Geskin, V. (author), Cornil, J. (author), Blom, P.W.M. (author), de Boer, B. (author), de Leeuw, D.M. (author), TNO Industrie en techniek (author)
The ultimate target of molecular electronics is to combine different types of functional molecules into integrated circuits, preferably through an autonomous self-assembly process. Charge transport through self-assembled monolayers has been investigated previously, but problems remain with reliability, stability and yield, preventing further...
article 2008
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Smits, E.C.P. (author), Mathijssen, S.G.J. (author), Colle, M. (author), Mank, A.J.G. (author), Bobbert, P.A. (author), Blom, P.W.M. (author), de Boer, B. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Validation of models for charge transport in organic transistors is fundamentally important for their technological use. Usually current-voltage measurements are performed to investigate organic transistors. In situ scanning Kelvin probe microscopy measurements provide a powerful complementary technique to distinguish between models based on...
article 2007
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Smits, E.C.P. (author), Setayesh, S. (author), Anthopoulos, T.D. (author), Buechel, M. (author), Nijssen, W. (author), Coehoorn, R. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Recent years have seen tremendous advances in the area of organic-based optoelectronic devices and several applications previously envisioned are now reaching the stage of commercial exploitation.[1] Organic field-effect transistors (OFETs) are among these devices and can be arguably viewed as a possible alternative to their inorganic...
article 2006
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Stingelin-Stutzmann, N. (author), Smits, E. (author), Wondergem, H. (author), Tanase, C. (author), Blom, P.W.M. (author), Smits, E.C.P. (author), Leeuw, D.M. (author), TNO Industrie en Techniek (author)
Electronic devices based on single crystals of organic semiconductors provide powerful means for studying intrinsic charge-transport phenomena and their fundamental electronic limits1–4. However, for technological exploitation, it is imperative not to be confined to the tedious growth and cumbersome manipulation of molecular crystals—which...
article 2005
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Anthopoulos, T.D. (author), Setayesh, S. (author), Smits, E. (author), Cölle, M. (author), Cantatore, E. (author), de Boer, B. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
To date there are two demonstrated technologies for the fabrication of organic integrated circuits: the unipolar and the complementary technology. Unipolar architectures consist of p-channel organic field-effect transistors (OFETs), which are simple to fabricate since they require a single, high-workfunction metal (e.g., gold) and a single...
article 2005
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