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Garripoli, C. (author), van der Steen, J.L.P.J. (author), Smits, E. (author), Gelinck, G.H. (author), van Roermund, A.H.M. (author), Cantatore, E. (author)
conference paper 2017
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Yoo, H. (author), Ghittorelli, M. (author), Lee, D.K. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Ahn, H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent...
article 2017
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Heremans, P. (author), Tripathi, A.K. (author), de Jamblinne de Meux, A. (author), Smits, E.C.P. (author), Hou, B. (author), Pourtois, G. (author), Gelinck, G.H. (author)
The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under...
article 2016
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Oostra, A.J. (author), Reddy, A. (author), Smits, E.C.P. (author), Abbel, R.J. (author), Groen, W.A. (author), Blom, P.W.M. (author), Michels, J.J. (author)
A method is presented to self-repair cracks in embedded silver grid structures used in large area organic electronics. The repair procedure is based on electro-deposition, incited by the application of a moderate DC voltage across the crack. During this process the organic anode that is in direct electrical contact with the silver grid,...
article 2016
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Torricelli, F. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Roelofs, C.W.S. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kovács-Vajna, Z.M. (author), Cantatore, E. (author)
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 105...
article 2016
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Koetse, M.M. (author), Smits, E.C.P. (author), Rubingh, J.E.J.M. (author), Teunissen, P. (author), Kusters, R.H.L. (author), Abbel, R.J. (author), van den Brand, J. (author)
Although many electronic functionalities can be realized by printed or organic electronics, short-term marketable products often require robust, reproducible, and nondisturbing technologies. In this chapter we show how hybrid electronics, a combination of printed circuitry, thin-film electronics, and classical silicon-based electronics, may give...
bookPart 2016
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Yoo, H. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors....
article 2016
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Oostra, A.J. (author), Smits, E.C.P. (author), de Leeuw, D.M. (author), Blom, P.W.M. (author), Michels, J.J. (author)
The operational characteristics of organic solar cells manufactured with large area processing methods suffers from the occurrence of short-circuits due to defects in the photoactive thin film stack. In this work we study the effect of a shunt resistance on an organic solar cell and demonstrate that device performance is not affected negatively...
article 2015
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Sridhar, A. (author), Perinchery, S.M. (author), Smits, E.C.P. (author), Mandamparambil, R. (author), van den Brand, J. (author)
The reliability of a commercially available isotropic conductive adhesive (ICA) deposited via laser induced forward transfer (LIFT) printing is reported. ICAs are particularly important for surfacemount device (SMD) integration onto low-cost, large-area system-in-foil (SiF) applications such as radio frequency identification (RFID) transponder...
article 2015
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Ohmea, H. (author), Tomita, Y. (author), Kashara, M. (author), Schram, J. (author), Smits, E.C.P. (author), van den Brand, J. (author), Bossuyt, F. (author), Vanfleteren, J. (author), de Baets, J. (author)
We present a stretchable and foldable passive matrix driven display using 45 by 80 RGB LED’s mounted on a meandering printed circuitry embedded in a polyurethane film. The meander interconnections have been optimized with respect to their electrical and mechanical properties to provide a display with a 3 mm pitch between the pixels and a...
conference paper 2015
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Giesbers, M.P. (author), Hoppenbrouwers, M.B. (author), Smits, E.C.P. (author), Mandamparambil, R. (author)
Laser induced forward transfer (LIFT) is a freeform, additive patterning technique capable of depositing high resolution metal structures. A laser pulse is used to generate small droplets from the donor material, defined by the spot size and energy of the pulse. Metallic as well as non-metallic materials can be patterned using this method. Being...
conference paper 2014
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Andringa, A.-M. (author), Smits, E.C.P. (author), Klootwijk, J.H. (author), de Leeuw, D.M. (author)
We present a functional real-time NO2 sensor based on a ZnO field-effect transistor. The dynamic response of the sensor is calculated using a phenomenological charge trapping model, using only experimentally determined parameters. This analytical model is implemented in the sensor protocol to create a hardware demonstrator sensor. We show that...
article 2013
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Ringk, A. (author), Roelofs, W.S.C. (author), Smits, E.C.P. (author), van der Marel, C. (author), Salzman, I. (author), Neuhold, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet...
article 2013
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Vásquez Quintero, A. (author), van Remoortere, B. (author), Smits, E.C.P. (author), van den Brand, J. (author), Briand, D. (author), Schoo, H.F.M. (author), de Rooij, N.F. (author)
This paper describes and compares two integration methods to structurally laminate and interconnect foil-based components with flexible polymeric substrates. The first method uses isotropic conductive adhesives (ICA) confined in laser-ablated through foil vias (TFV), while the second one uses an anisotropic conductive adhesive (ACA). Both...
article 2013
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Ringk, A. (author), Li, X. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Neuhold, A. (author), Moser, A. (author), van der Marel, C. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly...
article 2013
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Ringk, A. (author), Roelofs, W.S.C. (author), Smits, E.C.P. (author), van der Marel, C. (author), Salzmann, I. (author), Neuhold, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet...
article 2013
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Asadi, K. (author), Katsouras, I. (author), Harkema, J. (author), Gholamrezaie, F. (author), Smits, E.C.P. (author), Biscarini, F. (author), Blom b, P.W.M. (author), de Leeuw, D.M. (author)
The contact resistance of a transistor using self-assembled monolayer (SAM)-modified source and drain electrodes depends on the SAM tunnel resistance, the height of the injection barrier and the morphology at the contact. To disentangle the different contributions, we have combined here the transmission line measurements in transistors with...
article 2012
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Brondijk, J.J. (author), Torricelli, F. (author), Smits, E.C.P. (author), Blom, P.W.M. (author), de Leeuw, D.M. (author)
The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the corresponding gate field is perpendicular to the...
article 2012
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Kalathimekkad, S. (author), Missinne, J. (author), Arias Espinoza, J.D. (author), van Hoe, B. (author), Bosman, E. (author), Smits, E. (author), Mandamparambil, R. (author), van Steenberge, G. (author), Vanfleteren, J. (author)
This paper describes the development of a low-cost technology platform for fluorescence-based optochemical sensors. These sensors were constructed by incorporating fluorescent sensing elements in the core of multimode waveguides or lightguides, and have applications in medical, biochemical and environmental diagnostics. Flexible lightguides were...
conference paper 2012
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Li, L. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Smits, E.C.P. (author), Kemerink, M. (author), Broer, D.J. (author), Gelinck, G.H. (author)
article 2012
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