Searched for: +
(1 - 20 of 71)

Pages

document
Huitema, E. (author), Gelinck, G.H. (author), van Lieshout, P. (author), van Veenendaal, E. (author), Touwslager, F. (author)
A QVGA active-matrix backplane was produced on a 25-um thin plastic substrate. A four-mask photolithographic process was used. The insulator layer and the semiconductor layer were organic material processed from solution. This backplane was a combination of the electrophoretic display effects supplied by SiPix and E-Ink Corp., resulting in...
article 2005
document
Gelinck, G.H. (author), Huitema, H.E.A. (author), van Mil, M. (author), van Veenendaal, E. (author), van Lieshout, P.J.G. (author), Touwslager, F. (author), Patry, S.F. (author), Sohn, S. (author), Whitesides, T. (author), McCreary, M.D. (author), TNO Industrie en Techniek (author)
A 100-um thin QVGA display was made by combining a 25-um thin organic transistor active-matrix backplane with an electrophoretic display film. High contrast and low crosstalk was achieved by the addition of a field shield to the backplane. The display can be bent repeatedly to a radius of 2 mm without any performance loss. Extended mechanical...
article 2006
document
Huitema, H.E.A. (author), Gelinck, G.H. (author), Lieshout, P.J.G. (author), van Veenendaal, E. (author), Touwslager, F.J. (author), TNO Industrie en Techniek (author)
A 100-um-thick 320 x 240-pixel active-matrix display integrated into a functional-device prototype is presented. The active matrix is composed of alternating layers of organic materials and gold. A six-mask photolithographic process is used. An electrophoretic electronic imaging film is laminated on top of the active matrix. The display is...
article 2006
document
Sele, C.W. (author), Kjellander, B.K.C. (author), Niesen, B. (author), Thornton, M.J. (author), van der Putten, J.B.P.H. (author), Myny, K. (author), Wondergem, H.J. (author), Moser, A. (author), Resel, R. (author), van Breemen, A.J.J.M. (author), van Aerle, N.A.J.M. (author), Heremans, P. (author), Anthony, J.E. (author), Gelinck, G.H. (author), TNO Industrie en Techniek (author)
(Figure Presented) Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural...
article 2009
document
Debucquoy, M. (author), Rockelé, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold...
article 2009
document
Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)
conference paper 2009
document
Marien, H. (author), Steyaert, M. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Gelinck, G.H. (author), Heremans, P.L. (author), TNO Industrie en Techniek (author)
In this paper a fully integrated organic DC-DC upconverter is presented in a pentacene p-type only technology. This 3-stage Dickson converter reaches a voltage conversion factor of 3 for a purely capacitive load and 2.5 for a 10 μA load current. The maximal output voltage goes up to 75 V and the Dickson core efficiency is 48 %. The clock signal...
conference paper 2010
document
Genoe, J. (author), Myny, K. (author), Steudel, S. (author), Smaut, S. (author), Vicca, P. (author), van der Putten, B. (author), Tripathi, A.K. (author), van Aerie, N.A.J.M. (author), Gelinck, G.H. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
Last year, advances in organic device technology (such as device scaling, high K-dielectrics [1], ... ) enabled a substantial progress in performance. This resulted in an increase in the data rate of plastic transponder circuits from about 2 kbit/s [21 to EPC-compatible speeds (SO kbit/s). The organic semiconductor pentacene deposited from...
conference paper 2010
document
Myny, K. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Imec, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Hogeschool Limburg, 3590 Diepenbeek, Belgium Katholieke Universiteit Leuven, 3001 Leuven, Belgium TNO-Holst Centre, High-Tech Campus 31, P.O. Box 8550, 5605KN Eindhoven, Netherlands (author)
Data rates of plastic transponder chips have been limited to a few kHz, limited by the inherent low mobility of organic semiconductors. However, a target application for plastic RFID tags is Electronic Product Coding (EPC), which will require, at a base carrier frequency fc = 13.56 MHz, a data rate of fc/512 = 52.969 kb/s. In this work, we show...
article 2010
document
Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
Research towards organic RFID tags is one of the drivers of organic electronics. In recent years, 64b organic RFID tags have been shown with capacitive coupling [1] and inductive coupling at 13.56 MHz [2,3]. Recent improvements were a 128b organic transponder chip with basic anti-collision and Manchester encoding [4] and a first 4b tag in...
conference paper 2010
document
Dos Santos Ferreira, O. (author), Gelinck, E.R.M. (author), de Graaf, D. (author), Fischer, H. (author), TNO Industrie en Techniek (author)
Adhesion measurements were performed by AFM (Atomic Force Microscopy). It was shown that many parameters need to be controlled in order to provide reproducible and quantitative results. Adhesion forces were shown to depend on combination of materials characteristics and testing geometry as well as experimental protocol (contact time, contact...
article 2010
document
Myny, K. (author), Steudel, S. (author), Vicca, P. (author), Smout, S. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
A target application for plastic RFID tags is Electronic Product Coding (EPC). The EPC-specifications set some demanding requirements for RFID tags. In this work, we review the work that has been done to fulfill some of these specifications. We describe a complete 64-bit RFID tag that is inductively-coupled at a base carrier frequency of 13.56...
conference paper 2010
document
Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)
Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a VT-control gate. Both zero-VGS-load and diode-load logic are investigated. The noise margin of zero- VGS-load inverter increases from 1.15 V...
article 2011
document
Myny, K. (author), van Veenendaal, E. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)
We introduce a microprocessor made by organic thin-film transistors processed directly onto flexible plastic foil. This is a direct realization of a microprocessor by thin-film technology, i.e., without transfer, on plastic. It paves the way to equip mundane supports and objects with low-cost computing power. We also demonstrate the correct...
conference paper 2011
document
Heremans, P. (author), Gelinck, G.H. (author), Müller, R. (author), Baeg, K.J. (author), Kim, D.Y. (author), Noh, Y.Y. (author)
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories. We classify several possible devices according to their operation principle and critically review the...
article 2011
document
Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), van Breemen, A.J.J.M. (author), Shanmugam, S. (author), Gilot, J. (author), Andriessen, H.A.J.M. (author), Matthias, S. (author), Ruetten, W. (author), Douglas, A. (author), Raaijmakers, R. (author), Malinowski, P.E. (author), Myny, K. (author), Gelinck, G.H. (author)
We demonstrate high performance X-ray imaging detectors on foil suitable for medical grade X-ray imaging applications. The detectors are based on solution-processed organic photodiodes forming bulk-heterojunctions from photovoltaic donor and acceptor blend. The organic photodiodes are deposited using an industrially compatible slot die coating...
conference paper 2011
document
Tripathi, A.K. (author), Smits, E.C.P. (author), Loth, M. (author), Anthony, J.E. (author), Gelinck, G.H. (author)
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s...
article 2011
document
Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author)
article 2011
document
Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
document
Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, G. (author), Heremans, P. (author), Gelinck, G.H. (author)
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit...
article 2011
Searched for: +
(1 - 20 of 71)

Pages