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Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)
Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a VT-control gate. Both zero-VGS-load and diode-load logic are investigated. The noise margin of zero- VGS-load inverter increases from 1.15 V...
article 2011
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Gelinck, G.H. (author), Huitema, H.E.A. (author), van Mil, M. (author), van Veenendaal, E. (author), van Lieshout, P.J.G. (author), Touwslager, F. (author), Patry, S.F. (author), Sohn, S. (author), Whitesides, T. (author), McCreary, M.D. (author), TNO Industrie en Techniek (author)
A 100-um thin QVGA display was made by combining a 25-um thin organic transistor active-matrix backplane with an electrophoretic display film. High contrast and low crosstalk was achieved by the addition of a field shield to the backplane. The display can be bent repeatedly to a radius of 2 mm without any performance loss. Extended mechanical...
article 2006
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Myny, K. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Imec, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Hogeschool Limburg, 3590 Diepenbeek, Belgium Katholieke Universiteit Leuven, 3001 Leuven, Belgium TNO-Holst Centre, High-Tech Campus 31, P.O. Box 8550, 5605KN Eindhoven, Netherlands (author)
Data rates of plastic transponder chips have been limited to a few kHz, limited by the inherent low mobility of organic semiconductors. However, a target application for plastic RFID tags is Electronic Product Coding (EPC), which will require, at a base carrier frequency fc = 13.56 MHz, a data rate of fc/512 = 52.969 kb/s. In this work, we show...
article 2010
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Wang, H. (author), Cobb, B. (author), van Breemen, A. (author), Gelinck, G.H. (author), Bao, Z. (author)
Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized...
article 2014
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), van Neer, M. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Lieshout, P. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
article 2012
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Sele, C.W. (author), Kjellander, B.K.C. (author), Niesen, B. (author), Thornton, M.J. (author), van der Putten, J.B.P.H. (author), Myny, K. (author), Wondergem, H.J. (author), Moser, A. (author), Resel, R. (author), van Breemen, A.J.J.M. (author), van Aerle, N.A.J.M. (author), Heremans, P. (author), Anthony, J.E. (author), Gelinck, G.H. (author), TNO Industrie en Techniek (author)
(Figure Presented) Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural...
article 2009
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Heremans, P. (author), Tripathi, A.K. (author), de Jamblinne de Meux, A. (author), Smits, E.C.P. (author), Hou, B. (author), Pourtois, G. (author), Gelinck, G.H. (author)
The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under...
article 2016
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Smaal, W. (author), Kjellander, C. (author), Jeong, Y. (author), Tripathi, A.K. (author), van der Putten, B. (author), Facchetti, A. (author), Yan, H. (author), Quinn, J. (author), Anthony, J. (author), Myny, K. (author), Dehaene, W. (author), Gelinck, G.H. (author)
article 2012
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Heremans, P. (author), Gelinck, G.H. (author), Müller, R. (author), Baeg, K.J. (author), Kim, D.Y. (author), Noh, Y.Y. (author)
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories. We classify several possible devices according to their operation principle and critically review the...
article 2011
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Bhoolokam, A. (author), Nag, M. (author), Chasin, A. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Groeseneken, G. (author), Heremans, P. (author)
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain...
article 2015
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time...
article 2016
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Huitema, E. (author), Gelinck, G.H. (author), van Lieshout, P. (author), van Veenendaal, E. (author), Touwslager, F. (author)
A QVGA active-matrix backplane was produced on a 25-um thin plastic substrate. A four-mask photolithographic process was used. The insulator layer and the semiconductor layer were organic material processed from solution. This backplane was a combination of the electrophoretic display effects supplied by SiPix and E-Ink Corp., resulting in...
article 2005
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Fukui, Y. (author), Shibata, M. (author), Tanaka, Y. (author), Okumoto, K. (author), Morita, K. (author), Otake, K. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), van Leuken, L. (author), Li, F. (author), Yakimets, I. (author), Gelinck, G.H. (author), Myny, K. (author), Smout, S. (author), Willegems, M. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)
We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under...
article 2013
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Tripathi, A.K. (author), Smits, E.C.P. (author), Loth, M. (author), Anthony, J.E. (author), Gelinck, G.H. (author)
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s...
article 2011
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Gelinck, G.H. (author), Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Shafique, U. (author), Malinowski, P.E. (author), Myny, K. (author), Rand, B.P. (author), Simon, M. (author), Rütten, W. (author), Douglas, A. (author), Jorritsma, J. (author), Heremans, P.L. (author), Andriessen, H.A.J.M. (author)
We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate of 25 mu;m thickness, the photodetector is only...
article 2013
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author)
article 2011
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Khikhlovskyi, V. (author), Wang, R. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Janssen, R.A.J. (author), Kemerink, M. (author)
Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism. Resistive switching is...
article 2014
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van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)
In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...
article 2013
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
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Debucquoy, M. (author), Rockelé, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author), TNO Industrie en Techniek (author)
In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold...
article 2009
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