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Myny, K. (author), Beenhakkers, M.J. (author), van Aerle, N.A.J.M. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author)
Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a VT-control gate. Both zero-VGS-load and diode-load logic are investigated. The noise margin of zero- VGS-load inverter increases from 1.15 V...
article 2011
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Myny, K. (author), Steudel, S. (author), Smout, S. (author), Vicca, P. (author), Furthner, F. (author), van der Putten, B. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Genoe, J. (author), Dehaene, W. (author), Heremans, P. (author), Imec, Kapeldreef 75, 3001 Leuven, Belgium Katholieke Hogeschool Limburg, 3590 Diepenbeek, Belgium Katholieke Universiteit Leuven, 3001 Leuven, Belgium TNO-Holst Centre, High-Tech Campus 31, P.O. Box 8550, 5605KN Eindhoven, Netherlands (author)
Data rates of plastic transponder chips have been limited to a few kHz, limited by the inherent low mobility of organic semiconductors. However, a target application for plastic RFID tags is Electronic Product Coding (EPC), which will require, at a base carrier frequency fc = 13.56 MHz, a data rate of fc/512 = 52.969 kb/s. In this work, we show...
article 2010
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Steudel, S. (author), Myny, K. (author), Schols, S. (author), Vicca, P. (author), Smout, S. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), van Neer, M. (author), Schütze, F. (author), Hild, O.R. (author), van Veenendaal, E. (author), van Lieshout, P. (author), van Mil, M. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
article 2012
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Smaal, W. (author), Kjellander, C. (author), Jeong, Y. (author), Tripathi, A.K. (author), van der Putten, B. (author), Facchetti, A. (author), Yan, H. (author), Quinn, J. (author), Anthony, J. (author), Myny, K. (author), Dehaene, W. (author), Gelinck, G.H. (author)
article 2012
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Heremans, P. (author), Gelinck, G.H. (author), Müller, R. (author), Baeg, K.J. (author), Kim, D.Y. (author), Noh, Y.Y. (author)
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories. We classify several possible devices according to their operation principle and critically review the...
article 2011
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Fukui, Y. (author), Shibata, M. (author), Tanaka, Y. (author), Okumoto, K. (author), Morita, K. (author), Otake, K. (author), Tripathi, A.K. (author), van der Putten, B. (author), van der Steen, J.L. (author), Tempelaars, K. (author), van Leuken, L. (author), Li, F. (author), Yakimets, I. (author), Gelinck, G.H. (author), Myny, K. (author), Smout, S. (author), Willegems, M. (author), Schols, S. (author), Steudel, S. (author), Genoe, J. (author), Heremans, P. (author)
We have developed a full color flexible top-emission AMOLED display with 80 ppi resolution using In-Ga-Zn-O TFT backplane on PEN foil under the maximum process temperature of 150 oC. Notwithstanding the low processing temperature, the TFTs with SiOx passivation layer show high reliability with VTH shift of less than 0.2 V at 10,000 seconds under...
article 2013
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Tripathi, A.K. (author), Smits, E.C.P. (author), Loth, M. (author), Anthony, J.E. (author), Gelinck, G.H. (author)
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s...
article 2011
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Gelinck, G.H. (author), Kumar, A. (author), Moet, D. (author), van der Steen, J.L. (author), Shafique, U. (author), Malinowski, P.E. (author), Myny, K. (author), Rand, B.P. (author), Simon, M. (author), Rütten, W. (author), Douglas, A. (author), Jorritsma, J. (author), Heremans, P.L. (author), Andriessen, H.A.J.M. (author)
We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate of 25 mu;m thickness, the photodetector is only...
article 2013
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G.H. (author)
article 2011
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van Breemen, A. (author), Kam, B. (author), Cobb, B. (author), Rodriguez, F.G. (author), van Heck, G. (author), Myny, K. (author), Marrani, A. (author), Vinciguerra, V. (author), Gelinck, G.H. (author)
In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to a size of 16 × 16, processed on thin (25 μm)...
article 2013
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Torricelli, F. (author), Meijboom, J.R. (author), Smits, E. (author), Tripathi, A.K. (author), Gelinck, G.H. (author), Colalongo, L. (author), Kovacs-Vajna, Z.M. (author), de Leeuw, D. (author), Cantatore, E. (author)
Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is...
article 2011
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Li, L. (author), van Breemen, A.J.J.M. (author), Khikhlovskyi, V. (author), Smits, E.C.P. (author), Kemerink, M. (author), Broer, D.J. (author), Gelinck, G.H. (author)
article 2012
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Tripathi, A.K. (author), Smits, E.C.P. (author), van der Putten, J.B.P.H. (author), van Neer, M. (author), Myny, K. (author), Nag, M. (author), Steudel, S. (author), Vicca, P. (author), O'Neill, K. (author), van Veenendaal, E. (author), Genoe, G. (author), Heremans, P. (author), Gelinck, G.H. (author)
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The technology is demonstrated with circuit...
article 2011
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Li, X. (author), Kadashchuk, A. (author), Fishchuk, I.I. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Broer, D.J. (author), Genoe, J. (author), Heremans, P. (author), Bässler, H. (author)
While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin...
article 2012
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Nag, M. (author), Chasin, A. (author), Roekele, M. (author), Steudel, S. (author), Myny, K. (author), Bhoolokam, A. (author), Tripathi, A. (author), van der Putten, B. (author), Kumar, A. (author), van der Steen, J.L. (author), Genoe, J. (author), Li, F. (author), Maas, J. (author), van Veenendaal, E. (author), Gelinck, G. (author), Heremans, P. (author)
In this study, the authors report on high-quality amorphous indium-galliunv-zinc oxide thinfilm transistors (TFTs) based on a single-source dual-layer concept processed at temperatures down to ISCC. The dual-layer concept allows the precise control of local charge carrier densities by varying the 02/Ar gas ratio during sputtering for the bottom...
article 2013
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Moonen, P.F. (author), Vratzov, B. (author), Smaal, W.T.T. (author), Gelinck, G.H. (author), Peter, M. (author), Meinders, E.R. (author), Huskens, J. (author)
In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The...
article 2011
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Yu, L. (author), Li, X. (author), Smith, J. (author), Tierney, S. (author), Sweeney, R. (author), Kjellander, B.K.C. (author), Gelinck, G.H. (author), Anthopoulos, T.D. (author), Stingelin, N. (author)
We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor...
article 2012
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Ringk, A. (author), Roelofs, W.S.C. (author), Smits, E.C.P. (author), van der Marel, C. (author), Salzman, I. (author), Neuhold, A. (author), Gelinck, G.H. (author), Resel, R. (author), de Leeuw, D.M. (author), Strohriegl, P. (author)
Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an amorphous, two-dimensional semiconducting sheet...
article 2013
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Kam, B. (author), Li, X. (author), Cristoferi, C. (author), Smits, E.C.P. (author), Mityashin, A. (author), Schols, S. (author), Genoe, J. (author), Gelinck, G.H. (author), Heremans, P. (author)
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top...
article 2012
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Tripathi, A.K. (author), van Breemen, A.J.J.M. (author), Shen, J. (author), Gao, Q. (author), Ivan, M.G. (author), Reimann, K. (author), Meinders, E.R. (author), Gelinck, G.H. (author)
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by...
article 2011
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