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Steudel, S. (author), van der Steen, J.L. (author), Nag, M. (author), Ke, T.H. (author), Smout, S. (author), Bel, T. (author), van Diesen, K. (author), de Haas, G. (author), Maas, J. (author), de Riet, J. (author), Rovers, M. (author), Verbeek, R. (author), Huang, Y.Y. (author), Chiang, S.C. (author), Ameys, M. (author), de Roose, F. (author), Dehaene, W. (author), Genoe, J. (author), Heremans, P. (author), Gelinck, G. (author), Kronemeijer, A.J. (author)
We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made...
conference paper 2017
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Malinowski, P.E. (author), Ke, T. (author), Nakamura, A. (author), Vicca, P. (author), Kronemeijer, A.J. (author), Ameys, M. (author), van der Steen, J.L. (author), Steudel, S. (author), Kamochi, Y. (author), Iwai, Y. (author), Gelinck, G. (author), Heremans, P. (author)
This paper describes the potential of hi-res display fabrication using OLED photolithography. We demonstrate 1250 ppi multicolor arrays, pixel scaling down to 3 μm pitch, integration in active displays, and improving lifetime after patterning (200 hours T75, smOLEDs). Photolithography can enable low-cost, high resolution displays for the 8K – VR...
conference paper 2017
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Ghittorelli, M. (author), Torricelli, F. (author), Garripoli, C. (author), van der Steen, J.L.J.P. (author), Gelinck, G.H. (author), Abdinia, S. (author), Cantatore, E. (author), Kovacs-Vajna, Z.M. (author)
conference paper 2017
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Garripoli, C. (author), van der Steen, J.L.P.J. (author), Smits, E. (author), Gelinck, G.H. (author), van Roermund, A.H.M. (author), Cantatore, E. (author)
conference paper 2017
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Marinkovic, M. (author), Takata, R. (author), Neumann, A. (author), Pham, D.V. (author), Anselmann, R. (author), Maas, J. (author), van der Steen, J.L. (author), Gelinck, G. (author), Katsouras, Ilias (author)
Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability....
conference paper 2017
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Yoo, H. (author), Ghittorelli, M. (author), Lee, D.K. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Ahn, H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent...
article 2017
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Heremans, P. (author), Tripathi, A.K. (author), de Jamblinne de Meux, A. (author), Smits, E.C.P. (author), Hou, B. (author), Pourtois, G. (author), Gelinck, G.H. (author)
The increasing interest in fl exible electronics and fl exible displays raises questions regarding the inherent mechanical properties of the electronic materials used. Here, the mechanical behavior of thin-fi lm transistors used in activematrix displays is considered. The change of electrical performance of thinfilm semiconductor materials under...
article 2016
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time...
article 2016
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Torricelli, F. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Roelofs, C.W.S. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kovács-Vajna, Z.M. (author), Cantatore, E. (author)
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 105...
article 2016
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Pilet, N. (author), Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Michels, J.J. (author), Kemerink, M. (author), Gelinck, G. (author), Warnicke, P. (author), Bernard, L. (author)
Organic electronics is becoming more and more important because the low level of fabrication and deposition complexity even at large scale makes it a good candidate for future low cost technological product development. P(VDF-TrFE) is a co-polymer of special interest due its ferroelectric property enabling usage in re-programmable non-volatile...
article 2016
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Cai, R. (author), Kassa, H.G. (author), Haouari, R. (author), Marrani, A. (author), Geerts, Y.H. (author), Ruzié, C. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)
Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating...
article 2016
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Yoo, H. (author), Ghittorelli, M. (author), Smits, E.C.P. (author), Gelinck, G.H. (author), Lee, H.K. (author), Torricelli, F. (author), Kim, J.J. (author)
Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors....
article 2016
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Bhoolokam, A. (author), Nag, M. (author), Chasin, A. (author), Steudel, S. (author), Genoe, J. (author), Gelinck, G. (author), Groeseneken, G. (author), Heremans, P. (author)
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain...
article 2015
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Tripathi, A.K. (author), Myny, K. (author), Hou, B. (author), Wezenberg, K. (author), Gelinck, G.H. (author)
In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters...
article 2015
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Myny, K. (author), Cobb, B. (author), van der Steen, J.L. (author), Tripathi, A.K. (author), Genoe, J. (author), Gelinck, G. (author), Heremans, P. (author)
Our goal is to create thin low-cost flexible NFC tags to allow everyday objects to communicate to smartphones and computers and thus participate in the Internet of Things. We employ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor circuits processed at low temperatures, less than 250C, directly on thin polyester substrates....
conference paper 2015
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Gelinck, G.H. (author), Cobb, B. (author), van Breemen, A.J.J.M. (author), Myny, K. (author)
Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading...
article 2015
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Nag, M. (author), Bhoolokam, A. (author), Smout, S. (author), Willegems, M. (author), Muller, R. (author), Myny, K. (author), Schols, S. (author), Ameys, M. (author), Genoe, J. (author), Ke, T.H. (author), Vicca, P. (author), Ellis, T. (author), Cobb, B. (author), Kumar, A. (author), van der Steen, J.L.P.J. (author), Gelinck, G. (author), Fukui, Y. (author), Obata, K. (author), Groeseneken, G. (author), Heremans, P. (author), Steudel, S. (author)
A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5...
article 2015
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Khikhlovskyi, V. (author), van Breemen, A.J.J.M. (author), Michels, J.J. (author), Janssen, R.A.J. (author), Gelinck, G.H. (author), Kemerink, M. (author)
In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of...
article 2015
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Cai, R. (author), Kassa, H.G. (author), Marrani, A. (author), van Breemen, A.J.J.M. (author), Gelinck, G.H. (author), Nysten, B. (author), Hu, Z. (author), Jonas, A.M. (author)
Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one...
conference paper 2015
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Wang, H. (author), Cobb, B. (author), van Breemen, A. (author), Gelinck, G.H. (author), Bao, Z. (author)
Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized...
article 2014
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