Print Email Facebook Twitter Charge trapping in organic transistor memories: On the role of electrons and holes Title Charge trapping in organic transistor memories: On the role of electrons and holes Author Debucquoy, M. Rockelé, M. Genoe, J. Gelinck, G.H. Heremans, P. TNO Industrie en Techniek Publication year 2009 Abstract In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity. © 2009 Elsevier B.V. All rights reserved. Subject ElectronicsIndustrial InnovationAmbipolarCharge trappingMemoryOrganic transistorTunnelingAmbipolarBi-directionalEfficient methodElectrons and holesMemoryMemory performanceOrganic transistorPolymeric insulatorsSemiconductor channelsThreshold voltage shiftsTrapped chargeTunnelingGate dielectricsGates (transistor)Threshold voltageTransistorsTunneling (excavation)Wind tunnelsCharge trapping To reference this document use: http://resolver.tudelft.nl/uuid:c1e242b5-d5f0-4eb9-83d8-60325b8e831f TNO identifier 279976 ISSN 1566-1199 Source Organic Electronics: physics, materials, applications, 10 (7), 1252-1258 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.