Print Email Facebook Twitter Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers Title Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers Author Vigneau, F. Mizokuchi, R. Colao Zanuz, D. Huang, X. Tan, S. Maurand, R. Frolov, S. Sammak, A. Scappucci, G. Lefloch, F. de Franceschi, S. Publication year 2019 Abstract Hybrid superconductor−semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge. Subject High Tech Systems & MaterialsIndustrial InnovationSuperconducting quantum interference deviceTwo-dimensional hole gasProximity-effect-induced superconductivityJosephson field-effect transistorGe quantum well To reference this document use: http://resolver.tudelft.nl/uuid:71e4306e-d626-4076-a0a5-2fb33d7590c8 DOI https://doi.org/10.1021/acs.nanolett.8b04275 TNO identifier 875356 Publisher American Chemical Society ACS, Washington, D.C. Source Nano Letters, 19, 1023-1027 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.