Title
Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers
Author
Vigneau, F.
Mizokuchi, R.
Colao Zanuz, D.
Huang, X.
Tan, S.
Maurand, R.
Frolov, S.
Sammak, A.
Scappucci, G.
Lefloch, F.
de Franceschi, S.
Publication year
2019
Abstract
Hybrid superconductor−semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge.
Subject
High Tech Systems & Materials
Industrial Innovation
Superconducting quantum interference device
Two-dimensional hole gas
Proximity-effect-induced superconductivity
Josephson field-effect transistor
Ge quantum well
To reference this document use:
http://resolver.tudelft.nl/uuid:71e4306e-d626-4076-a0a5-2fb33d7590c8
DOI
https://doi.org/10.1021/acs.nanolett.8b04275
TNO identifier
875356
Publisher
American Chemical Society ACS, Washington, D.C.
Source
Nano Letters, 19, 1023-1027
Document type
article