Print Email Facebook Twitter Electrical control of uniformity in quantum dot devices Title Electrical control of uniformity in quantum dot devices Author Meyer, M. Déprez, C. van Abswoude, T.R. Meijer, I.N. Liu, D. Wang, C.A. Karwal, S. Oosterhout, S.D. Borsoi, F. Sammak, A. Hendrickx, N.W. Scappucci, G. Veldhorst, M. Publication year 2023 Abstract Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays. Subject Quantum dotHysteresisUniformitySpin qubit To reference this document use: http://resolver.tudelft.nl/uuid:18302005-6578-489a-a5f3-c056cb7ed5c3 TNO identifier 985475 Publisher ACS Source NANO letters, 23 (23) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.