Print Email Facebook Twitter Propagation mechanism of reverse bias induced defects in Cu(In,Ga)Se2 solar cells Title Propagation mechanism of reverse bias induced defects in Cu(In,Ga)Se2 solar cells Author Bakker, K. Aahman, H.N. Burgers, T. Barreau, N. Weeber, A. Theelen, M. Publication year 2020 Abstract Partial shading of monolithically interconnected Cu(In,Ga)Se2 (CIGSe) modules can lead to the formation of reverse bias induced defects. These localized defects permanently reduce the output of the PV module. The formation and propagation mechanisms of these defects is studied. Understanding these mechanisms can help to prevent or mitigate damage due to partial shading of CIGSe PV modules. A propagation mechanism is proposed based on both compositional changes found at the edges of the reverse bias induced defects and differences in observed propagation patterns caused by the lateral voltage drop over the TCO layer. © 2019 Elsevier B.V. Subject Industrial InnovationCIGSPartial shadingPropagation mechanismReverse biasTCOWormlike defectsSolar cells To reference this document use: http://resolver.tudelft.nl/uuid:fd6ce24e-5d80-4063-b131-d78ad148f32d DOI https://doi.org/10.1016/j.solmat.2019.110249 TNO identifier 869837 Publisher Elsevier B.V. ISSN 0927-0248 Source Solar Energy Materials and Solar Cells, 205 Article number 110249 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.