Title
Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories
Author
van Breemen, A.J.J.M.
Zaba, T.
Khikhlovskyi, V.
Michels, J.
Janssen, R.
Kemerink, M.
Gelinck, G.
Publication year
2015
Abstract
The polymer phase separation of P(VDF-TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase-separating mixture of P(VDF-TrFE) and F8BT in a thin film into a highly ordered 2D lattice by means of surface directed phase separation. Numerical simulation of the surface-controlled de-mixing process provides insight in the ability of the substrate pattern to direct the phase separation, and hence the regularity of the domain pattern in the final dry blend layer. By optimizing the ratio of the blend components, the number of electrically active semiconductor domains is maximized. Pattern replication on a cm-scale is achieved, and improved functional device performance is demonstrated in the form of a 10-fold increase of the ON-current and a sixfold increase in current modulation. This approach therefore provides a simple and scalable means to higher density integration, the ultimate target being a single semiconducting domain per memory cell.
Subject
2015 Nano Technology
HOL - Holst
TS - Technical Sciences
Chemistry Materials
Industrial Innovation
Ferroelectric diode
Resistive switch
Data storage equipment
Digital storage
Ferroelectricity
Polymer blends
Semiconductor diodes
Electrically actives
Ferroelectric polymers
Functional devices
Non-volatile memory
Pattern replication
Polymer phase separation
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http://resolver.tudelft.nl/uuid:f7ba8c1d-3da9-419d-baa3-12a025d590ec
DOI
https://doi.org/10.1002/adfm.201401896
TNO identifier
572429
Publisher
Wiley-VCH Verlag
ISSN
1616-301X
Source
Advanced Functional Materials, 25 (2), 278-286
Document type
article