Print Email Facebook Twitter Lightly strained germanium quantum wells with hole mobility exceeding one million Title Lightly strained germanium quantum wells with hole mobility exceeding one million Author Lodari, M. Kong, O. Rendell, M. Tosato, A. Sammak, A. Veldhorst, M. Hamilton, A.R. Scappucci, G. Publication year 2022 Abstract We demonstrate that a lightly-strained germanium channel ("// = −0.41%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1 × 106 cm2/Vs and percolation density less than 5 × 1010 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068me) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware. Subject Field effect transistorsGermaniumHall mobilityQuantum Hall effectSemiconductor quantum wellsSolventsFractional quantum Hall effectsGermanium quantum wellsGermaniums (Ge)Heterostructure field effect transistorsHole gasHole systemsLow magnetic fieldsLower densityTunablesTwo-dimensionalHole mobilityHigh Tech Systems & MaterialsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:f7107252-0c5f-4fc6-8e14-340c0b6e568a DOI https://doi.org/10.1063/5.0083161 TNO identifier 967484 Publisher American Institute of Physics AIP ISSN 0003-6951 Source Applied Physics Letters, 120 (120) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.