Title
Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage
Author
Cai, R.
Kassa, H.G.
Haouari, R.
Marrani, A.
Geerts, Y.H.
Ruzié, C.
van Breemen, A.J.J.M.
Gelinck, G.H.
Nysten, B.
Hu, Z.
Jonas, A.M.
Publication year
2016
Abstract
Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices. cop. 2016 The Royal Society of Chemistry.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Data storage equipment
Digital storage
Ferroelectricity
Device configurations
Electrostatic coupling
Ferroelectric devices
Piezoelectric devices
Nanostructured hybrids
Semiconducting nanowires
Ferroelectric materials
To reference this document use:
http://resolver.tudelft.nl/uuid:f6dc7f34-c41a-407b-9318-6462717326f2
DOI
https://doi.org/10.1039/c6nr00049e
TNO identifier
534564
Publisher
Royal Society of Chemistry
ISSN
2040-3364
Source
Nanoscale, 8 (11), 5968-5976
Bibliographical note
Funding Details: Fédération Wallonie-Bruxelles
Document type
article