Title
Unipolar organic transistor circuits made robust by dual-gate technology
Author
Myny, K.
Beenhakkers, M.J.
van Aerle, N.A.J.M.
Gelinck, G.H.
Genoe, J.
Dehaene, W.
Heremans, P.
Publication year
2011
Abstract
Dual-gate organic transistor technology is used to increase the robustness of digital circuits as illustrated by higher inverter gains and noise margins. The additional gate in the technology functions as a VT-control gate. Both zero-VGS-load and diode-load logic are investigated. The noise margin of zero- VGS-load inverter increases from 1.15 V (single gate) to 2.8 V (dual gate) at 20 V supply voltage. Diode-load logic inverters show an improvement in noise margin from ~0 V to 0.7 V for single gate and dual gate inverters, respectively. These values can be increased significantly by optimizing the inverter topologies. As a result of this optimization, noise margins larger than 6 V for zero- V GS-load logic and 1.4 V for diode-load logic are obtained. Functional 99-stage ring oscillators with 2.27 µs stage delays and 64 bit organic RFID transponder chips, operating at a data rate of 4.3 kb/s, have been manufactured.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Dual-gate
Organic circuits
Organic RFID
Organic transistor
Control gates
Data rates
Gate technology
Inverter topologies
Noise margins
RFID transponders
Single gates
Stage ring oscillators
Supply voltages
Cryptography
Digital integrated circuits
Diodes
Optimization
Oscillators (electronic)
Transistors
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http://resolver.tudelft.nl/uuid:f317b7cf-51db-47ba-9c5e-b184efc85a23
TNO identifier
429745
ISSN
0018-9200
Source
IEEE Journal of Solid-State Circuits, 46 (5), 1223-1230
Article number
No.: 5733376
Document type
article