Title
Atmospheric Pressure Plasma Assisted Spatial ALD of Silicon Nitride
Author
Shen, J.
Roozeboom, F.
Mameli, A.
Publication year
2023
Abstract
Atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-spatial-ALD) of SiNx is demonstrated for the first time. Using bis(diethylamino)silane (BDEAS) and N2 plasma from a dielectric barrier discharge source, a process was developed at low deposition temperatures (≤ 250 °C). The effect of N2 plasma exposure time and overall cycle time on layer composition was investigated. In particular, the oxygen content was found to decrease with decreasing both above-mentioned parameters. As measured by depth profile X-ray photoelectron spectroscopy, 4.7 at.% was the lowest oxygen content obtained, whilst 13.7 at.% carbon was still present at a deposition temperature of 200 °C. At the same time, deposition rates up to 1.5 nm/min were obtained, approaching those of plasma enhanced chemical vapor deposition and thus opening new opportunities for high-throughput atomic-level processing of nitride materials.
Subject
Spatial ALD
Silicon nitride
SiNx
Spatial atomic layer deposition
Atmospheric pressure
Low temperature (250 °C)
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:ed49dbdc-7577-4193-b699-82b254aa40a7
DOI
https://doi.org/10.15212/aldj.1.101651
TNO identifier
985229
Source
Atomic Layer Deposition, 1-11
Document type
article