Title
Physics of organic ferroelectric field-effect transistors
Author
Brondijk, J.J.
Asadi, K.
Blom, P.W.M.
de Leeuw, D.M.
Publication year
2012
Abstract
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge transport in organic FeFETs. The model combines an empirical expression for the ferroelectric polarization with a density dependent hopping charge transport in organic semiconductors. Transfer curves can be calculated with parameters that are directly linked to the physical properties of both the comprising ferroelectric and semiconductor materials. A unipolar FeFET switches between a polarized and depolarized state, and an ambipolar FeFET switches between two stable polarized states. A good agreement between experimental and calculated current is obtained. The method is generic; any other analytical model for the polarization and charge transport can be easily implemented and can be used to identify the origin of the different transconductances reported in the literature. © 2011 Wiley Periodicals, Inc.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
charge transport
conjugated polymers; ferroelectricity; ferroelectrics; field-effect transistors; fluoropolymers
modeling
nonvolatile memory
organic electronics; thin films
A-density
Ambipolar
Analytical model
Empirical expression
Ferroelectric field effect transistors
Ferroelectric polarization
Low-power consumption
Non-volatile memories
Nondestructive read-out
nonvolatile memory
Organic electronics
Polarized state
Transfer curves
Charge transfer
Computer simulation
Conjugated polymers
Ferroelectric materials
Ferroelectricity
Fluorine containing polymers
Mathematical models
Models
Polarization
Semiconductor materials
Transistors
Organic field effect transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:eaf92491-ac92-4520-bb06-c06bffd38b2f
TNO identifier
445679
ISSN
0887-6266
Source
Journal of Polymer Science, Part B: Polymer Physics, 50 (1), 47-54
Document type
article