Title
Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios
Author
Dogan, T.
Verbeek, R.
Kronemeijer, A.J.
Bobbert, P.A.
Gelinck, G.H.
van der Wiel, W.G.
Publication year
2019
Abstract
A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm ?2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Subject
Organic electronics
Polymer semiconductors
Short-channel effects
Vertical organic field-effect transistors
Refractory metal compounds
Transistors
Dielectric layer
Electronic behaviors
Gate electrodes
Large current density
ON/OFF current ratio
Organic electronics
Polymer semiconductors
Short-channel effect
Organic field effect transistors
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http://resolver.tudelft.nl/uuid:e75edefd-ec0c-400b-b7c8-77252552ef46
TNO identifier
866604
Publisher
Blackwell Publishing Ltd
ISSN
2199-160X
Source
Advanced Electronic Materials
Article number
1900041
Document type
article