Title
Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs
Author
TNO Defensie en Veiligheid
van Heijningen, M.
van Vliet, F.E.
Quay, R.
van Raay, F.
Kiefer, R.
Mueller, S.
Krausse, D.
Seelmann-Eggebert, M.
Mikulla, M.
Schlechtweg, M.
Publication year
2005
Abstract
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 um thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMIC s have a very good yield and performance for a first iteration design.
Subject
Gain measurement
Gallium nitride
High electron mobility transistors
Integrated circuit layout
Iterative methods
Monolithic microwave integrated circuits
Semiconducting aluminum compounds
CPW technology
High power amplifiers
Output power
Small signal gain
Power amplifiers
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TNO identifier
213784
Publisher
European Microwave Association EuMA, Louvain-la-Neuve
Source
8th European Microwave Week EuMW - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, GAAS 2005, 3-4 October 2005, Paris, France, 237-240
Document type
conference paper