Title
Charge transport in solution processable polycrystalline dual-gate organic field effect transistors
Author
Tripathi, A.K.
Smits, E.C.P.
Loth, M.
Anthony, J.E.
Gelinck, G.H.
Publication year
2011
Abstract
Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively. © 2011 American Institute of Physics.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
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http://resolver.tudelft.nl/uuid:e5ac5785-e2e6-40f2-8baf-a785d76fa9da
TNO identifier
430118
ISSN
0003-6951
Source
Applied Physics Letters, 98 (20)
Article number
No.: 202106
Document type
article