Nanoscale Design of Multifunctional Organic Layers for Low-Power High-Density Memory Devices

Nanoscale Design of Multifunctional Organic Layers for Low-Power High-Density Memory Devices

Nougaret, L.
Kassa, H.G.
Cai, R.
Patois, T.
Nysten, B.
van Breemen, A.J.J.M.
Gelinck, G.H.
de Leeuw, D.M.
Marrani, A.
Hu, Z.
Jonas†, A.M.

2014

We demonstrate the design of a multifunctional organic layer by the rational combination of nanosized regions of two functional polymers. Instead of relying on a spontaneous and random phase separation process or on the tedious synthesis of block copolymers, the method involves the nanomolding of a first component, followed by the filling of the resulting open spaces by a second component. We apply this methodology to fabricate organic nonvolatile memory diodes of high density. These are built by first creating a regular array of ferroelectric nanodots by nanoimprint lithography, followed by the filling of the trenches separating the ferroelectric nanodots with a semiconducting polymer. The modulation of the current in the semiconductor by the polarization state of the ferroelectric material is demonstrated both at the scale of a single semiconductor channel and in a microscopic device measuring about 80.000 channels in parallel, for voltages below ca. 2 V. The fabrication process, which combines synergetically orthogonal functional properties with a fine control over their spatial distribution, is thus demonstrated to be efficient over large areas.

Mechanics, Materials and Structures
HOL - Holst HOL - Holst
TS - Technical Sciences
Nanotechnology
Industrial Innovation
Organic electronics
Ferroelectric polymer
Semiconducting polymer
Nanoimprint lithography
Nonvolatile memory

http://resolver.tudelft.nl/uuid:e40bb403-18ea-46bc-abd9-3a61267603f9

https://doi.org/10.1021/nn406503g

502242

ACS Nano, 8 (4), 3498-3505

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