Title
High-resolution THZ imaging for optimized polysi patterning process
Author
Mewe, A.A.
Stodolny, M.
Manshanden, P.
Gutjahr, A.
Cesar, I.
Loffer, J.
Publication year
2019
Abstract
We present new ways to characterize, analyze and improve the patterning process of doped polysilicon (polySi) for application as passivating contacts for 6’’ high-efficiency bifacial cells and interdigitated back contact (IBC) cells. Combined with standard characterization techniques, non-destructive sheet resistance mapping with ultrahigh resolution using THz imaging allows us to understand p+polySi patterning issues. We propose a reliable, high-quality patterning process that provides firing-stable surface passivation. Such passivation levels are suitable for application in several high-efficiency cell concepts, including IBC cells with polySi passivating contacts.
Subject
Energy Efficiency
Energy / Geological Survey Netherlands
Passivation
Screen Printing
Characterisation
To reference this document use:
http://resolver.tudelft.nl/uuid:e3697e7c-dfb8-4936-a362-c89adacd839a
TNO identifier
875656
Source
36th European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 9-13 September 2019
Document type
conference paper