Print Email Facebook Twitter Noise-margin analysis for organic thin-film complementary technology Title Noise-margin analysis for organic thin-film complementary technology Author Bode, D. Rolin, C. Schols, S. Debucquoy, M. Steudel, S. Gelinck, G.H. Genoe, J. Heremans, P. TNO Industrie en Techniek Publication year 2010 Abstract Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier. © 2009 IEEE. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesMaterialsIndustrial InnovationComplementary circuitsN-type organic thin-film transistor (n-type OTFT)Yield estimation To reference this document use: http://resolver.tudelft.nl/uuid:e220cdc3-8d10-4e75-ba78-d9959900c0c3 TNO identifier 275966 ISSN 0018-9383 Source IEEE Transactions on Electron Devices, 57 (1), 201-208 Article number No.: 5340654 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.