Title
Noise-margin analysis for organic thin-film complementary technology
Author
Bode, D.
Rolin, C.
Schols, S.
Debucquoy, M.
Steudel, S.
Gelinck, G.H.
Genoe, J.
Heremans, P.
TNO Industrie en Techniek
Publication year
2010
Abstract
Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier. © 2009 IEEE.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Materials
Industrial Innovation
Complementary circuits
N-type organic thin-film transistor (n-type OTFT)
Yield estimation
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TNO identifier
275966
ISSN
0018-9383
Source
IEEE Transactions on Electron Devices, 57 (1), 201-208
Article number
No.: 5340654
Document type
article