Title
Polymer light-emitting diodes with doped hole-transport layers
Author
Lu, M.
Nicolai, H.T.
Kuik, M.
Wetzelaer, G.-J.A.H.
Wildeman, J.
Palmaerts, A.
Blom, P.W.M.
Publication year
2011
Abstract
We demonstrate a solution processed bi-layer PLED based on poly(p-phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5-bis(2-ethylhexyloxy)-co-2,5- bis(butoxy)-1,4-phenylenevinylene] (BEH/BB-PPV (1:3)) is doped with tetracyano-tetrafluoro-quinodimethane (F4TCNQ). The conductivity of BEH/BB-PPV (1:3) was observed to increase by two orders of magnitude upon doping with F4TCNQ. The doped HTL was observed to lower the operating voltage of a double layer PLED, but suffers from additional quenching by the dopant at higher voltages due to the lack of an electron blocking functionality. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Hole-transport layer
Light-emitting diodes
Poly(phenylenevinylenes)
Polymers
Bi-layer
Double layers
Electron blocking
F4-TCNQ
Hole transport layers
Operating voltage
Orders of magnitude
Poly(p-phenylene vinylene) derivatives
Polymer light-emitting diodes
Solution-processed
Voltage drop
Functional polymers
Light emission
Light emitting diodes
Quenching
Doping (additives)
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TNO identifier
443015
ISSN
1862-6300
Source
Physica Status Solidi A: Applications and Materials, 208 (10), 2482-2487
Document type
article