Title
Progress on EUV Pellicle development
Author
Zoldesi, C.I.
Bal, K.
Blum, B.
Bock, G.
Brouns, D.
Dhalluin, F.
Dziomkina, N.
Arias Espinoza, J.D.
de Hoogh, J.
Houweling, S.
Jansen, M.
Kamali, M.
Kempa, A.
Kox, R.
de Kruif, R.
Lima, J.
Liu, Y.
Meijer, H.
Meiling, H.
van Mil, I.
Reijnen, M.
Scaccabarozzi, L.
Smith, D.
Verbrugge, B.
de Winter, L.
Xiong, X.
Zimmerman, J.
Contributor
Wood, O.R. (editor)
Panning, E.M. (editor)
Publication year
2014
Abstract
As EUV approaches high volume manufacturing, reticle defectivity becomes an even more relevant topic for further investigation. Current baseline strategy for EUV defectivity management is to design, build and maintain a clean system without pellicle. In order to secure reticle front side particle adders to an acceptable level for high volume manufacturing, EUV pellicle is being actively investigated. Last year ASML reported on our initial EUV pellicle feasibility. In this paper, we will update on our progress since then. We will also provide an update to pellicle requirements published last year. Further, we present experimental results showing the viability and challenges of potential EUV pellicle materials, including, material properties, imaging capability, scalability and manufacturability. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).
Subject
Physics & Electronics
NI - Nano Instrumentation
TS - Technical Sciences
Nanotechnology
EUV
Pellicle
Reticle defect mitigation
EUV mask infrastructure
To reference this document use:
http://resolver.tudelft.nl/uuid:dd53d834-e078-4f7b-85cc-1d9ff6193e19
DOI
https://doi.org/10.1117/12.2049276
TNO identifier
521417
Publisher
SPIE
Source
Extreme Ultraviolet (EUV) Lithography V
Article number
90481N
Bibliographical note
Extreme Ultraviolet (EUV) Lithography V, San Jose, California, USA | February 23, 2014
Document type
conference paper