PID and UVID resistant n-type solar cells and modules

PID and UVID resistant n-type solar cells and modules

Janssen, G.J.M.
Tool, C.J.J.
Romijn, I.G.
Loffler, J.
van Aken, B.B.
Lamers, M.W.P.E.
Venema, P.
Granneman, E.
Stodolny, M.K.
Siarheyeva, O.
Renes, M.
Wang, J.
Ma, J.
Cui, J.
Lang, F.
Hu, Z.
Energieonderzoek Centrum Nederland

2016

In this paper we report on the high stability of our n-type front junction solar cells (n-PERT) exposed to potential-induced degradation (PID) and UV-induced degradation (UVID) conditions. These intrinsically stable n-Pasha cells enable PID- and UVID-free modules even with industrially low-cost standard EVA encapsulant, independent of system grounding and system voltage. Based on intentional modifications of the Boron emitter and/or the dielectric layer in the PID-free and UVID-free n-Pasha solar cells, we are able to replicate reported degradation effects and study the mechanisms behind it. A combination of altering the boron profile and the dielectric properties together with increasing the interface defect density Dit is detrimental for the stability. Applying our standard optimal B-diffusion and passivation scheme assure that the UV radiation and system voltage have virtually no effect on our n-Pasha cell and module performance.

http://resolver.tudelft.nl/uuid:dcbcd0f7-a5f3-424a-9be5-f769f0559e39

822146

ECN-M--16-016

ECN, Petten

conference paper