Print Email Facebook Twitter 20W S-band high power amplifier using stacked FET topology Title 20W S-band high power amplifier using stacked FET topology Author van der Bent, G. de Hek, A.P. van Vliet, F.E. Publication year 2016 Subject 2015 Observation, Weapon & Protection SystemsRT - Radar TechnologyTS - Technical SciencesField effect transistorsGallium arsenideMicrowave amplifiersMicrowave integrated circuitsEfficient powerHigh power amplifierMonolithic microwave integrated circuits (MMIC)Output powerSilicon-based technologySupply currentsSupply voltagesThermal aspectsPower amplifiers To reference this document use: http://resolver.tudelft.nl/uuid:dc0d2888-d149-43b8-bfaa-efd3246151d6 TNO identifier 745600 Publisher Institute of Electrical and Electronics Engineers Inc. ISBN 9782874870446 Source 11th European Microwave Integrated Circuits Conference, EuMIC 2016. 3 October 2016 through 4 October 2016, 25-28 Article number 7777480 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.