Title
Field effect enhancement in buffered quantum nanowire networks
Author
Krizek, F.
Sestoft, J.E.
Aseev, P.
Marti-Sanchez, S.
Vaitiekénas, S.
Casparis, L.
Khan, S.A.
Liu, Y.
Stankevic, T.
Whiticar, A.M.
Fursina, A.
Boekhout, F.
Koops, R.
Uccelli, E.
Kouwenhoven, L.P.
Marcus, C.M.
Arbiol, J.
Krogstrup, P.
Publication year
2018
Abstract
Semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
Subject
Nanotechnology
High Tech Systems & Materials
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00
TNO identifier
843963
Publisher
American Physical Society APS, College Park, MD, USA
ISSN
2475-9953
Source
Physical review materials
Document type
article