Title
Controlling the on/off current ratio of ferroelectric field-effect transistors
Author
Katsouras, I.
Zhao, D.
Spijkman, M.J.
Li, M.
Blom, P.W.M.
de Leeuw, D.M.
Asadi, K.
Publication year
2015
Abstract
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Ferroelectric field effect
Transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:ceabeaa7-7f73-49aa-a318-c2965454ed53
DOI
https://doi.org/10.1038/srep12094
TNO identifier
531357
ISSN
2045-2322
Source
Scientific Reports, 5
Article number
12094
Document type
article