Title
Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon
Author
Matters-Kammerer, M.K.
Jinesh, K.B.
Rijks, T.G.S.M.
Roozeboom, F.
Klootwijk, J.H.
Publication year
2012
Abstract
A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al 2O 3 and TiN is presented. It is shown that in situ ozone annealing of the Al 2O 3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from S-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm 2 electrode surface. These data are shown to be consistent with a theoretical model. © 2012 IEEE.
Subject
Mechatronics, Mechanics & Materials
EAM - Equipment for Additive Manufacturing
TS - Technical Sciences
Materials
Industrial Innovation
3-D silicon
atomic-layer deposition (ALD)
equivalent series inductance (ESL)
equivalent series resistance (ESR)
Fowler-Nordheim (FN) tunneling
high density capacitors
high-k dielectrics
macropore arrays
metal-insulator-metal (MIM)
silicon devices
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http://resolver.tudelft.nl/uuid:ca257a6d-62c2-49f5-a56d-8cec9dc09d8e
TNO identifier
460455
ISSN
0894-6507
Source
IEEE Transactions on Semiconductor Manufacturing, 25 (2), 247-254
Article number
No.: 6129442
Document type
article