Protection Circuit for High Power Amplifiers Operating Under Mismatch Conditions
TNO Defensie en Veiligheid
van der Bent, G.
van Wanum, M.
de Hek, A.P.
van der Graaf, M.W.
van Vliet, F.E.
A protection circuit is developed which protects transistors in the output stage of a High Power Amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 um GaAs power pHEMT process (PP50-11) of WIN Semiconductors
To reference this document use:
European Microwave Association EuMA, Louvain-la-Neuve
European Microwave Week EuMW 2007 - Proceedings of the 2nd European Microwave Integrated Circuits Conference - EuMIC 2007, 8-10 October 2007, ICM - Munich International Congress Centre, Munich, Germany, 158-161