Title
In-Panel 31.17dB 140kHz 87μW Unipolar Dual-Gate In-Ga-Zn-O Charge-Sense Amplifier for 500dpi Sensor Array on Flexible Displays
Author
Papadopoulos, N.
Steudel, S.
de Roose, F.
Eigabry, D.M.
Kronemeijer, A.J.
Genoe, J.
Dehaene, W.
Myny, K.
Publication year
2018
Abstract
In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at VDD=15V. The CSA comprises of a high gain and stable dual-ended output dual-stage amplifier. The n-type load is driven by a dual-stage buffer and start-up circuit to increase the performance and ensure stability. The amplifier operates down to 6V supply voltage. It achieves 31.17dB DC-gain, 140kHz gain-bandwidth, 53° phase margin and dissipates 87μW at 15V. The footprint of the CSA is 0.3mm2 and enables 1fps readout of 1 megapixel 500dpi sensor array. © 2018 IEEE.
Subject
amoled
amplifier
csa
display
dual gate
igzo
imager
in-panel
metal-oxide
Amplifiers (electronic)
Display devices
Flexible displays
Gallium compounds
Image sensors
Light amplifiers
Light emission
Metals
Zinc compounds
Active matrix organic light emitting displays (AMOLED)
AM-OLED
Direct integration
Dual gates
Fingerprint sensors
Flexible substrate
igzo
Metal oxides
Indium compounds
To reference this document use:
http://resolver.tudelft.nl/uuid:c5944912-d559-4e5a-ab84-363fcc78381f
TNO identifier
843676
Publisher
Institute of Electrical and Electronics Engineers Inc.
ISBN
9781538654040
Source
ESSCIRC 2018 - 44th IEEE European Solid State Circuits Conference, ESSCIRC 2018, 3 September 2018 through 6 September 2018, 102-105
Article number
8494260
Bibliographical note
Conference Paper
Document type
conference paper