Title
Quantum Dots in an InSb Two-Dimensional Electron Gas
Author
Kulesh, I.
Ke, C.T.
Thomas, C.
Karwal, S.
Moehle, C.M.
Metti, S.
Kallaher, R.
Gardner, G.C.
Manfra, M.J.
Goswami, S.
Publication year
2020
Abstract
Indium-antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, a strong spin-orbit interaction, a large Landé g factor, and a small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the δ-doping layer from the heterostructure and induce carriers electrostatically. This allows us to perform a detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single-particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field, we determine the ground-state spin configuration and show that the large g factor (approximately 30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.
Subject
High Tech Systems & Materials
Industrial Innovation
Antimony compounds
Ground state
III-V semiconductors
Indium antimonides
Magnetic fields
Nanocrystals
Semiconductor quantum dots
Spin orbit coupling
Carrier confinements
Gate-defined quantum dots
High electron mobility
Indium antimonide (InSb)
Parallel magnetic field
Quantum confined systems
Singlet-triplet transitions
Spin orbit interactions
Two dimensional electron gas
To reference this document use:
http://resolver.tudelft.nl/uuid:c40a8338-02c9-43d0-ad0d-48dc026b4c69
DOI
https://doi.org/10.1103/physrevapplied.13.041003
TNO identifier
876308
Publisher
American Physical Society APS
ISSN
2331-7019
Source
Physical Review Applied, 13 (4), 041003
Article number
41003
Document type
article