3D Advance Metrology by means of 3D Atomic Force Microscopy
Nulkes-de Groot, N.
van Riel, M.J.C.M.
van Essen, B.H.M.F.
van Koppen, M.E.C.T.
We developed a new 3D-AFM technique that enables imaging of high aspect ratio trenches. By measuring both lateral and vertical forces on a cantilever tip, a subharmonic mode based on the attractive tip-sample forces becomes feasible. This enables the measurement of true 3D information of samples without causing damage. This is especially relevant for semiconductor metrology, as current solutions are lagging behind the development of (near-future) lithography capabilities. Our goal: measure metrology parameters such as critical dimension (CD), side wall angle (SWA), Line edge Roughness (LER), etc.
High Tech Systems & Materials
To reference this document use:
3D atomic force microscopy
ERP Early Research Program
ERP 3D Nanomanufacturing Instruments
SID Semicon Innovation Day, Science Centre Delft, 21 May 2019