Title
Single-Chip 100-Watt S-band Power Amplifier in 0.25 um GaN HEMT MMIC Technology
Author
van der Bent, G.
de Hek, A.P.
van Vliet, F.E.
Ouarch, A.
Publication year
2020
Abstract
A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational equency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.
Subject
Defence Research
Defence, Safety and Security
To reference this document use:
http://resolver.tudelft.nl/uuid:ba08b197-5eaf-4a98-8774-a856f9356ecc
TNO identifier
946802
Publisher
IEEE
Source
Proceedings of the 15th European Microwave Integrated Circuits Conference, 21-24
Document type
conference paper