Print Email Facebook Twitter Large-area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure Title Large-area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure Author Katsouras, I. Frijters, C. Poodt, P. Gelinck, G. Kronemeijer, A.J. Publication year 2019 Abstract Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat-panel display industry. Subject Industrial InnovationIGZOSelf-aligned TFTSemiconductorsSpatial atomic layer depositionTFT manufacturing To reference this document use: http://resolver.tudelft.nl/uuid:b35c9b10-3eb5-4e43-ad89-4e7d3ac61848 DOI https://doi.org/10.1002/jsid.783/ TNO identifier 866886 Publisher Wiley-Blackwell Publishing Ltd ISSN 1071-0922 Source Journal of the Society for Information Display Document type article Files To receive the publication files, please send an e-mail request to TNO Library.