Title
A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set
Author
TNO Defensie en Veiligheid
de Hek, A.P.
van der Bent, G.
van Wanum, M.
van Vliet, F.E.
Publication year
2005
Abstract
An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which have an output power of 10 Watt over the 8.5 - 10.5 GHz frequency band and a driver amplifier with an output power of more than 1 Watt over the 8.5 - 11.5 GHz frequency band. The amplifiers have been developed in the 6-inch 0.5 um power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process in combination with the used innovative design approach results in a cost effective chip set, which is competitive in both performance and price with any available solution.
Subject
Band structure
Cost effectiveness
High electron mobility transistors
Microprocessor chips
Natural frequencies
Radar systems
Semiconductor materials
Telecommunication services
Chip-set
Driver amplifier
WIN Semiconductors
X-band power amplifier
Power amplifiers
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http://resolver.tudelft.nl/uuid:b154d79f-b5fb-43aa-9947-f61d4bc6fc24
TNO identifier
222307
Publisher
EuMA, Louvain-la-Neuve
Source
8th European Microwave Week EUMW, 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, GAAS 2005, 3-7 october 2005, Paris, France
Document type
conference paper