Title
Toward temperature tracking with unipolar metal-oxide thin-film SAR C-2C ADC on Plastic
Author
Papadopoulos, N.P.
de Roose, F.
van der Steen, J.-L.P.J.
Smits, E.C.P.
Ameys, M.
Dehaene, W.
Genoe, J.
Myny, K.
Publication year
2018
Abstract
The maturity of metal–oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-ofEverything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this paper, a self-biased and self-digital-controlled successive approximation ADC with integrated references and sensor read-in circuitry together with a printed negative temperature coefficient (NTC) sensor using unipolar dual-gate metal–oxide (InGaZnO) TFTs is demonstrated. The system is operated at a clock of up to 400 Hz and a total power dissipation of 245 mW (73 µW from analog) at a maximum power supply of 30 V is measured. The radio-frequency identification-ready ADC comprises of a total of 1394 indium–gallium–zinc oxide TFTs and 31 metal–insulator–metal capacitors. A figure of merit of 26 nJ/c.s. is achieved from the ADC driven from external microcontroller. The robustness of the various blocks of the chip is characterized and the yield is discussed.
Subject
Analog-to-digital converter (ADC)
C2C
Digital control
Flex
Indium-gallium-zinc oxide (IGZO)
Internet of Everything
Internet of Things (IoT)
Polyimide (PI)
Pseudo-CMOS
Radio-frequency identification (RFID)
Sensor
Successive approximation (SAR)
Tag
Temperature
To reference this document use:
http://resolver.tudelft.nl/uuid:ae470083-c8f0-455d-bd44-165f02562d41
DOI
https://doi.org/10.1109/jssc.2018.2831211
TNO identifier
954976
Publisher
Institute of Electrical and Electronics Engineers Inc.
ISSN
0018-9200
Source
IEEE Journal of Solid-State Circuits, 53 (53), 2263-2272
Document type
article