Print Email Facebook Twitter A 10 GHz Integrated Single Sideband Upconverter in 0.25 μm BiCMOS Technology Title A 10 GHz Integrated Single Sideband Upconverter in 0.25 μm BiCMOS Technology Author de Boer, A. Rodenburg, M. van Dijk, R. van Vliet, F.E. Geurts, M. Publication year 2011 Abstract An 8 - 10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be compatible with more than one type of direct digital synthesizer and to minimize spurious products that are not cancelled by the mixer concept. The device has sideband suppression of over 45 dB and third-order spurious suppression of over 40 dB. Subject Physics & ElectronicsRT - Radar TechnologyTS - Technical SciencesPhysicsFrequency conversionMixerModulationBiCMOS integrated circuits To reference this document use: http://resolver.tudelft.nl/uuid:aa07ac04-12ee-455c-9db7-8a3276b7ee62 TNO identifier 441915 Source 14th European Microwave Week 2011, EuMW2011: Wave to the future - Proceedings of 41st European Microwave Conference, EuMC 2011, 9-14 October 2011, Manchester, UK, 1123-1126 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.