Title
Amorphous silicon solar cells on natively textured ZnO grown by PECVD
Author
Löffler, J.
Groenen, R.
Linden, J.L.
van de Sanden, M.C.M.
Schropp, R.E.I.
Technisch Physische Dienst TNO - TH
Contributor
Meinema, H.A. (editor)
Spee, C.I.M.A. (editor)
Aegerter, M.A. (editor)
Publication year
2001
Abstract
Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to reference SnO2:F (Asahi U-type). At higher substrate temperature and with growing thickness, the surface roughness of the ZnO films increases. Layers with electrical (sheet resistance <10 Ω/□), optical (transmittance > 80%) and morphological (surface texture) properties comparable to Asahi U-type SnO2:F have been obtained. Preliminary solar cells deposited on ZnO show an efficiency approaching 10%. cop. 2001 Elsevier Science B.V.
Subject
Plasma processing and deposition
Silicon
Solar cells
Zinc oxide
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DOI
https://doi.org/10.1016/s0040-6090(01)01050-1
TNO identifier
236163
ISSN
0040-6090
Source
Thin Solid Films, 392 (2), 315-319
Bibliographical note
3rd International Conference on Coating on Glass (ICCG), 28 October 2000 through 2 November 2000, Maastricht
Document type
article