Print Email Facebook Twitter Electron beam evaporated molybdenum oxide as Hole-selective contact 6-inch c-Si Heterojunction solar cells Title Electron beam evaporated molybdenum oxide as Hole-selective contact 6-inch c-Si Heterojunction solar cells Author Ah Sen, M.T.S.K. Spinelli, P. Kikkert, B.W.J. Hoek, E.G. Macco, B. Weeber, A.W. Bronsveld, P.C.P. Publication year 2018 Abstract Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions. Subject Energy EfficiencyEnergyEnergy / Geological Survey Netherlands To reference this document use: http://resolver.tudelft.nl/uuid:a30c4355-833d-4c91-b65b-14d0cf7dddf2 TNO identifier 843296 Source SiliconPV 2018, The 8th International Conference on Crystalline Silicon Photovoltaics, 1-6 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.