Title
60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals
Author
Gao, H.
Ying, K.
Matters-Kammerer, M.K.
Harpe, P.
Wang, B.
Liu, B.
Serdijn, W.A.
Baltus, P.G.M.
Publication year
2016
Abstract
A 5-bit digital controlled switch-type passive phase shifter realised in a 40 nm digital CMOS technology without ultra-thick metals for the 60 GHz Industrial, Scientific and Medical (ISM) band is presented. A patterned shielding with electromagnetic bandgap structure and a stacked metals method to increase the on-chip inductor quality factor are proposed. To reduce the insertion loss from the transistors, the transistor switches are implemented with a body-source connection. For all 32 states, the minimum phase error is 1.5°, and the maximum phase error is 6.8°. The measured insertion loss is -20.9 ± 1 dB including pad loss at 60 GHz and the return loss is >10 dB over 57-64 GHz. The total chip size is 0.24 mm2 with 0 mW DC power consumption.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Materials
Industrial Innovation
CMOS integrated circuits
Electromagnetic shielding
Insertion losses
Controlled phase shifters
DC power consumption
Digital CMOS technology
Electromagnetic bandgap structures
Onchip inductors
Transistor switch
Phase shifters
To reference this document use:
http://resolver.tudelft.nl/uuid:a2928936-a0e9-4ffd-9b26-645ebbe029ff
DOI
https://doi.org/10.1049/el.2016.0949
TNO identifier
573070
Publisher
Institution of Engineering and Technology
ISSN
0013-5194
Source
Electronics Letters, 52 (19), 1611-1613
Document type
article