Title
Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors
Author
Bhoolokam, A.
Nag, M.
Chasin, A.
Steudel, S.
Genoe, J.
Gelinck, G.
Groeseneken, G.
Heremans, P.
Publication year
2015
Abstract
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain this. Multi-frequency analysis techniques for trap density distribution use a lumped series resistance model and attribute dispersion solely to the charging and discharging of trap states. As the resistance–capacitance (RC) time constant values of the IGZO TFTs are in the range of 10–100 µs, a distributed RC network is better suited for the measured frequency range (1 kHz–1 MHz). cop. 2014 The Korean Information Display Society.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Amorphous indium–gallium–zinc–oxide (a-IGZO)
Amorphous oxide semiconductor (AOS)
CV
Frequency dispersion
To reference this document use:
http://resolver.tudelft.nl/uuid:a25f2be7-57dd-4400-b12e-4696e6eb1573
DOI
https://doi.org/10.1080/15980316.2014.991769
TNO identifier
524103
Publisher
Taylor and Francis Ltd.
ISSN
1598-0316
Source
Journal of Information Display, 16 (1), 31-36
Document type
article