Title
Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors
Author
Illiberi, A.
Cobb, B.
Sharma, A.
Grehl, T.
Brongersma, H.
Roozeboom, F.
Gelinck, G.
Poodt, P.
Publication year
2015
Abstract
We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium (TMIn), triethyl gallium (TEGa), and water were used as Zn, In, Ga and oxygen precursors, respectively. The vaporized metal precursors have been coinjected in the reactor. The metal composition of InGaZnO has been controlled by varying the TMIn or TEGa flow to the reactor, for a given DEZ flow and exposure time. The morphology of the films changes from polycrystalline, for ZnO and In-doped ZnO, to amorphous for In-rich IZO and InGaZnO. The use of these films as the active channel in TFTs has been demonstrated and the influence of In and Ga cations on the electrical characteristics of the TFTs has been studied. cop. 2015 American Chemical Society.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Materials
Industrial Innovation
Amorphous semiconductors
Atmospheric pressure
Atomic layer deposition
Indium gallium zinc oxide
Nucleation
Thin film transistors
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DOI
https://doi.org/10.1021/am508071y
TNO identifier
524124
Publisher
American Chemical Society
ISSN
1944-8244
Source
ACS Applied Materials and Interfaces, 7 (6), 3671-3675
Document type
article