Title
Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)
Author
Lu, M.
Nicolai, H.T.
Wetzelaer, G.-J.A.H.
Blom, P.W.M.
Publication year
2011
Abstract
N-type doping of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n-type doping simultaneously suppresses the hole transport in MEH-PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC-doped MEH-PPV polymer light-emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Materials
Industrial Innovation
charge transport
molecular doping
organic semiconductors
polymer light-emitting diodes
Electron transport
Hole transports
Hole trapping
MEH-PPV
Molecular doping
n-Type doping
Orders of magnitude
Organic semiconductor
P-phenylene vinylene
Poly(p-phenylenevinylene)
polymer light-emitting diodes
Aromatic compounds
Hole mobility
Hole traps
Light emission
Organic light emitting diodes (OLED)
Quenching
Semiconductor diodes
Semiconductor doping
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http://resolver.tudelft.nl/uuid:a04d1008-be7f-46a8-893c-bae18c23b0e5
TNO identifier
461359
ISSN
0887-6266
Source
Journal of Polymer Science, Part B: Polymer Physics, 49 (24), 1745-1749
Document type
article