Print Email Facebook Twitter Effect of n-type doping on the hole transport in poly(p-phenylene vinylene) Title Effect of n-type doping on the hole transport in poly(p-phenylene vinylene) Author Lu, M. Nicolai, H.T. Wetzelaer, G.-J.A.H. Blom, P.W.M. Publication year 2011 Abstract N-type doping of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n-type doping simultaneously suppresses the hole transport in MEH-PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC-doped MEH-PPV polymer light-emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesMaterialsIndustrial Innovationcharge transportmolecular dopingorganic semiconductorspolymer light-emitting diodesElectron transportHole transportsHole trappingMEH-PPVMolecular dopingn-Type dopingOrders of magnitudeOrganic semiconductorP-phenylene vinylenePoly(p-phenylenevinylene)polymer light-emitting diodesAromatic compoundsHole mobilityHole trapsLight emissionOrganic light emitting diodes (OLED)QuenchingSemiconductor diodesSemiconductor doping To reference this document use: http://resolver.tudelft.nl/uuid:a04d1008-be7f-46a8-893c-bae18c23b0e5 TNO identifier 461359 ISSN 0887-6266 Source Journal of Polymer Science, Part B: Polymer Physics, 49 (24), 1745-1749 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.