Title
A method of manufacturing a semi-conducting thin film device
Author
Mameli, A.
Kronemeijer, A.J.
Roozeboom, F.
Publication year
2021
Abstract
The present disclosure relates to a method of manufacturing a thin film device (100). A multilevel nanoimprint lithography template (20) is transferred into a thin film stack comprising an electrode layer (11) and a blanket sacrificial layer (12) covering the electrode layer. The template is transferred, thereby patterning the device (100) and exposing a predefined insulating area (A2) of the electrode while keeping a remaining portion (12a) of the sacrificial layer that covers a predefined electrical contact area (A1) of the electrode. An area selective ALD process is performed to selectively cover the exposed area of the electrode layer with a cover layer. After removing the remaining portion (12a) of the sacrificial layer (12) the electrical contact area (A1) of the electrode layer (11) is exposed for further processing.
Subject
Thin fim device
Manufacturing
Semi-conducting
High Tech Systems & Materials
Industrial Innovation
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TNO identifier
959297
Report number
EP 3 822 955 A1
Publisher
European Patent Office
Document type
patent