Print Email Facebook Twitter High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide) Title High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide) Author Mameli, A. Parish, J.D. Dogan, T. Gelinck, G. Snook, M.W. Straiton, A.J. Johnson, A.L. Kronemeijer, A.J. Publication year 2022 Abstract Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)2 result in linear mobilities of up to 0.4 cm2 V–1 s–1 and on/off-current ratios, IOn/IOff > 102. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates. Subject Atmospheric pressureDeposition ratesSubstratesThin film circuitsThin film transistorsThin filmsHigh Tech Systems & MaterialsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:9acf8a42-5dc1-407a-9d08-996044ea40f4 DOI https://doi.org/10.1002/admi.202101278 TNO identifier 963701 Publisher Wiley Source Advanced Materials Interfaces Document type article Files To receive the publication files, please send an e-mail request to TNO Library.